 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| (R) ISL74422BRH Data Sheet October 2003 FN6057 Radiation Hardened, 9A, Non-Inverting Power MOSFET Driver The radiation hardened ISL74422BRH is a non-inverting, monolithic high-speed MOSFET driver designed to convert a 5V CMOS logic input signal into a high current output at voltages up to 18V. Its fast rise/fall times and high current output allow very quick control of even the largest power MOSFETs in high frequency applications. The input of the ISL74422BRH can be directly driven by our IS-1825ASRH and IS-1845ASRH PWM devices. The 9A high current output minimizes power losses in MOSFETs by rapidly charging and discharging large gate capacitances. A supply UVLO (Under Voltage Lock Out) circuit insures predictable turn-on and turn-off of the driver. Constructed with the Intersil dielectrically isolated Rad-Hard Silicon Gate (RSG) BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-03248. A "hot-link" is provided on our website for downloading. Features * QML Qualified per MIL-PRF-38535 Requirements * Electrically Screened to DSCC SMD # 5962-03248 * Radiation Environment - Total Dose (Max) . . . . . . . . . . . . . . . . . . . . 300krad(SI) - Latch-Up Immune * IPEAK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A (Min) * TFALL (CL = 10nF) . . . . . . . . . . . . . . . . . . . . . 135ns (Max) * TRISE (CL = 10nF) . . . . . . . . . . . . . . . . . . . . . 135ns (Max) * Prop Delay High-Low (CL = 10nF) . . . . . . . . . 175ns (Max) * Prop Delay Low-High (CL = 10nF) . . . . . . . . . 175ns (Max) * Rising UVLO Threshold . . . . . . . . . . . . . . . . . . 7.5V (Max) * Falling UVLO Threshold. . . . . . . . . . . . . . . . . . .6.0V (Min) * UVLO Hysteresis . . . . . . . . . . . . . . . . . . . . . . . .0.3V (Min) * Wide Supply Voltage Range . . . . . . . . . . . . . . . 8V to 18V * Low Stand-by Current Consumption - Input Low . . . . . . . . . . . . . . . . . . . . . . . . . .2.1mA (Max) - Input High . . . . . . . . . . . . . . . . . . . . . . . . . .2.7mA (Max) Applications * Switching Power Supplies * DC/DC Converters Pinout ISL74422BRHF (FLATPACK CDFP4-F16) TOP VIEW NC NC VS (IB) VIN GND (IB) NC NC GND (OB) 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VS (OB) VS (OB) NC +VOUT -VOUT NC NC GND (OB) * Motor Controllers Ordering Information ORDERING NUMBER 5962F0324801VXC 5962F0324801QXC INTERNAL MKT. NUMBER ISL74422BRHVF ISL74422BRHQF TEMP. RANGE (oC) -55 to 125 -55 to 125 -55 to 125 ISL74422BRHF/PROTO ISL74422BRHF/PROTO NOTES: 1. Pin 3 provides the supply voltage for the control logic. It is not internally connected to pins 15 and 16 for noise immunity purposes, but it must be connected externally. 2. Pin 5 is the control logic return. It is not internally connected to pins 8 and 9 for noise immunity purposes, but it must be connected externally. 3. Pins 8 and 9 must be connected to GND. 4. Pins 12 and 13 must be externally connected. 5. Pins 15 and 16 must be connected to VS. 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright (c) Intersil Americas Inc. 2003. All Rights Reserved All other trademarks mentioned are the property of their respective owners. ISL74422BRH Die Characteristics DIE DIMENSIONS: 4191m x 4826m (165 mils x 190 mils) Thickness: 483m 25.4m (19 mils 1 mil) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorous Silicon Glass) Thickness: 8.0kA 1.0kA Top Metallization: Type: AlSiCu Thickness: 16.0kA 2kA Substrate: Radiation Hardened Silicon Gate Dielectric Isolation Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Unbiased (DI) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 40 Metallization Mask Layout (3) VS (IB) ISL74422BRH (15, 16) VS (OB) (13) +VOUT (4) VIN (12) -VOUT (5) GND (IB) (8, 9) GND (OB) All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 2 |
Price & Availability of 5962F0324801QXC
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |